is201, is202, is203, is204, ISD201, isd202, isd203, isd204, isq201, isq202, isq203, isq204 isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 12/3/03 db91021m-aas/a4 0.5 7.62 7.0 6.0 1.2 option g 7.62 approvals l l ul recognised, file no. e91231 'x' specification approvals l vde 0884 in 3 available lead form : - - std - g form - smd approved to cecc 00802 l is20* certified to en60950 by the following test bodies :- nemko - certificate no. p01102464 fimko - certificate no. fi18166 semko - reference no. 0202037/01-22 demko - certificate no. 311158-01 l bsi approved - certificate no. 8001 description the is20*, isd20*, isq20* series of optically coupled isolators consist of infrared light emitting diodes and npn silicon photo transistors in space efficient dual in line plastic packages. features l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l high isolation voltage (5.3kv rms ,7.5kv pk ) l high bv ceo (70v min) l all electrical parameter 100% tested l custom electrical selections available applications l computer terminals l industrial systems controllers l signal transmission between systems of different potentials and impedances 10.16 9.16 7.0 6.0 7.62 1.2 13 max 0.5 2.54 0.5 0.26 0.5 3 4 1 5 8 2 1 3 4 6 dimensions in mm high density phototransistor optically coupled isolators surface mount option sm 10.16 7.0 6.0 1.2 7.62 3.0 0.5 0.26 2.54 0.5 0.26 13 max 3.0 13 max 3.35 4.0 3.0 3.0 20.32 19.32 4.0 3.0 4.0 3.0 3.35 3.35 2.54 0.26 3 6 4 5 2 7 14 15 1 8 7.62 6.62 2 5 16 13 12 11 6 10 7 9 is201 is202 is203 is204 ISD201 isd202 isd203 isd204 i sq201 isq202 isq203 isq204 isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com 10.46 9.86 0.6 0.1 1.25 0.75
db91021m-aas/a4 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.65 v i f = 50ma reverse current (i r ) 10 m a v r = 4v output collector-emitter breakdown (bv ceo ) 70 v i c = 1ma ( note 2 ) emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo ) 50 na v ce = 10v coupled current transfer ratio (ctr) (note 2) is201, ISD201, isq201 75 % 10ma i f , 10v v ce is201, ISD201, isq201 10 % 1ma i f , 10v v ce is202, isd202, isq202 125 250 % 10ma i f , 10v v ce is202, isd202, isq202 30 % 1ma i f , 10v v ce is203, isd203, isq203 225 450 % 10ma i f , 10v v ce is203, isd203, isq203 50 % 1ma i f , 10v v ce is204, isd204, isq204 200 400 % 10ma i f , 10v v ce is204, isd204, isq204 100 % 1ma i f , 10v v ce collector-emitter saturation voltage v ce(sat) 0.2 0.4 v 10ma i f , 2ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output turn on time t on 3.0 m s i f = 10ma output turn off time t off 2.5 m s v ce = 5v, r l = 75 w note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 12/3/03 absolute maximum ratings (25c unless otherwise specified) storage temperature -40c to + 125c operating temperature -25c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 70v emitter-collector voltage bv eco 6v power dissipation 150mw power dissipation total power dissipation 170mw (derate linearly 2.67mw/ c above 25c) electrical characteristics ( t a = 25c unless otherwise noted )
db91021m-aas/a4 12/3/03 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 100 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 10ma i c = 2ma forward current i f (ma) ambient temperature t a ( c ) 0 0.5 1.0 1.5 i f = 1ma v ce = 10v relative current transfer ratio vs. ambient temperature relative current transfer ratio -30 0 25 50 75 100 ambient temperature t a ( c ) 0 0.5 1.0 1.5 i f = 10ma v ce = 10v relative current transfer ratio vs. ambient temperature relative current transfer ratio -30 0 25 50 75 100 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 v ce = 10v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma)
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